Preface to the Reissue of the Materials Characterization Series

Preface to Series

Preface to the Reissue of Characterization of Compound

Semiconductor Processing

Preface xiii

Contributors xv

CHARACTERIZATION OF III-V THIN FILMS FOR ELECTRONIC DEVICES

　1.1 Introduction 1

　1.2 Surface Characterization of GaAs Wafers 2

　　Dislocations 3, Surface Composition and Chemical State 4

　1.3 Ion Implantation 6

　1.4 Epitaxial Crystal Growth 11

　1.5 Summary 13

Ⅲ-V COMPOUND SEMICONDUCTOR FILMS FOROPTICAL APPLICATIONS

　2.1 Introduction 17

　2.2 Growth Rate/LayerThickness 20

　　In Situ Growth Monitors 20, Post-Growth Structural Analysis 22

　2.3 Composition Analysis 23

　2.4 Impurity and Dopant Analysis 27

　2.5 Electrical Properties in Optical Structures 28

　2.6 Optical Properties in Single and Multilayer Structures 33

　2.7 Interface Properties in Multilayer Structures 35

　2.8 Summary 37

CONTACTS

　3.1 Introduction 41

　3.2 In Situ Probes 44

　　Surface Preparation and Characterization 44, Initial Metal Deposition 45,

　　Subsequent Metal Deposition 48

　3.3 Unpatterned Test Structures 48

　　Electrical Characterization 48, Concentration Profiling 49,

　　Electron Microscopy 49

　3.4 Patterned Test Structures 51

　　Barrier Height 51, Contact Resistance 53, Morphology 54

DIELECTRIC INSULATING LAYERS

　4.1 Introduction 57

　4.2 Oxides and Oxidation 58

　4.3 HeteromorphicInsulators 60

　4.4 Chemical Modification of GaAs Surfaces 61

　4.5 Indium Phosphide-Insulator Interfaces 64

　4.6 Heterojunction Quasi-Insulator Interfaces 68

　4.7 Epitaxial Fluoride Insulators 72

　4.8 Commentary 74

OTHER COMPOUND SEMICONDUCTOR FILMS

　5.1 Introduction 83

　　A Focus on HgCdTe 83, Objective and Scope 84, Background 84,

　　Representative Device Structure 86

　5.2 Substrates and the CdTe Surface (Interface 1) 86

　　Substrate Quality 86, Substrate Surface Preparation 87

　5.3 Epitaxial HgCdTe Materials (Between Interfaces 2 and 5) 90

　　Desired Characteristics of the Active Layers 90, Composition 90,

　　Crystalline Quality 91, Doping 93, Minority Carrier Lifetime 96

　5.4 Heterojunction Interfaces (Interface 3) 98

　　Advantages of the Heterojunction 98, Desired Characteristics 98,

　　Characterizations 99

　5.5 HgCdTe Surface Preparation (Interfaces 4 and 5) 100

　　Importance of the Chemically Etched Surface 100, Monitoring of the Surface

　　Cleanliness by Ellipsometry 101, Characterization of Thin Native Oxides on HgCdTe by XPS 102, Surface Analysis by UPS 104

　5.6 Summary 105

DEEP LEVEL TRANSIENT SPECTROSCOPY: A CASE STUDY ON GaAs

　6.1 Introduction 109

　6.2 DLTS Technique: General Features 110

　6.3 Fabrication and Qualification of Schottky Diodes 111

　6.4 DLTS System 114

　6.5 DLTS Measurement Procedure 116

　6.6 Data Analysis 117

　　DLTS Spectrum 117, Activation Energy for Thermal Emission 118,

　　Trap Densities 120

　6.7 EL2 Center 121

　6.8 Summary 121

APPENDIX: TECHNIQUE SUMMARIES

　1 Auger Electron Spectroscopy (AES) 127

　2 Ballistic Electron Emission Microscopy (BEEM) 128

　3 Capacitance-Voltage (C-V) Measurements 135

　4 Deep Level Transient Spectroscopy (DLTS) 137

　5 Dynamic Secondary Ion Mass Spectrometry (D-SIMS) 139

　6 Electron Beam Induced Current (EBIC) Microscopy 140

　7 Energy-Dispersive X-Ray Spectroscopy (EDS) 146

　8 Focused Ion Beams (FIBs) 147

　9 Fourier Transform Infrared Spectroscopy (FTIR) 151

　10 Hall Effect Resistivity Measurements 152

　11 Inductively Coupled Plasma Mass Spectrometry (ICPMS) 154

　12 Light Microscopy 155

　13 Low-Energy Electron Diffraction (LEED) 156

　14 Neutron Activation Analysis (NAA) 157

　15 Optical Scatterometry 158

　16 Photoluminescence (PL) 159

　17 Raman Spectroscopy 160

　18 Reflection High-Energy Electron Diffraction (RH