半导体数据手册 上 / Springer手册精选原版系列
作者: (德)马德朗
出版时间:2014年3月
出版社:哈尔滨工业大学
- 哈尔滨工业大学
- 9787560345147
- 41553
- 2014年3月
- 未分类
- 未分类
- TN304-62
马德朗编著的《半导体数据手册(上)/Springer手册精选原版系列》是包含了几乎所有的半导体材料实验数据的参考书,适用对象包括材料、微电子学、电子科学与技术等专业的本科生和研究生,以及从事半导体研究的专业人员。本手册内容包括:四面体键元素及其化合物特性的实验数据(B);III、V、VI族元素特性的实验数据(C);各族元素的二元化合物特性的实验数据(D);各族元素的三元化合物特性的实验数据(E);硼、过渡金属和稀土化合物半导体特性的实验数据(F);以及相关材料的晶体结构、电学特性、晶格属性、传输特性、光学特性、杂质和缺陷等内容。
A Introduction
General remarks to the structure of this volume
2 Physical quantities tabulated in this volume
B Tetrahedrally bonded elements and pounds
1 Elements of the IVth group and IV-IV pounds
1.0 Crystal structure and electronic structure
1.1 Diamond (C)
1.2 Silicon (Si)
1.3 Gcrmanium (Ge)
1.4 Grey tin (a-Sn)
1.5 Silicon carbide (SiC)
1.6 Silicon germanium mixed crystals ( SixGe 1-x)
2 III-V pounds
2.0 Crystal structure and electronic structure
2.1 Boron nitride (BN)
2.2 Boron phosphide (BP)
2.3 Boron arsenide (BAs)
2.4 Boron antimonide (BSb)
2.5 Aluminumnitride(AIN)
2.6 Aluminum phosphide (AIP)
2.7 Aluminumarsenide (AIAs)
2.8 Aluminum antimonide (AISb)
2.9 Gallium nitride (GaN)
2.10 Gallium phosphide (GaP)
2.11 Gallium arsenide (GaAs)
2.12 Gallium antimonide (GaSb)
2.13 Indium nitride (InN)
2.14 Indiumphosphide (InP)
2.15 Indium arsenide (InAs)
2.16 Indium antimonide (InSb)
2.17 Ternary alloys lattice matched to binary III-V pounds
2.18 Quaternary alloys lattice matched to binary III-V pounds
3 II-VI pounds
3.0 Crystal structure and electronic structure
3.1 Beryllium oxide (Be0)
3.2 Beryllium sulfide (BeS)
3.3 Beryllium selenide (BeSe)
3.4 Beryllium telluride (BeTe)
3.5 Magnesium oxide (Mg0)
3.6 Magnesium sulfide (MgS)
3.7 Magnesium selenide (MgSe)
3.8 Magnesium telluride (MgTe)
3.9 Calcium oxide (Ca0)
3.10 Strontium oxide (Sr0)
3.11 Barium oxide (Ba0)
3.12 Zinc oxide (Zn0)
3.13 Zinc sulfide (ZnS)
3.14 Zinc selenide (ZnSe)
3.15 Zinc telluride (ZnTe)
3.16 Cadmium oxide (Cd0)
3.17 Cadmium sulfide (CdS)
3.18 Cadmium selenide (CdSe)
3.19 Cadmium telluride (CdTe)
3.20 Mercury oxide (Hg0)
3.21 Mercury sulfide (HgS)
3.22 Mercury selenide (HgSe)
3.23 Mercury telluride (HgTe)
4 I-VII pounds
4.0 Crystal structure and electronic structure
4.1 Cuprous fluoride (CuF)
4.2 Cuprous chloride (-{-CuCl)
4.3 Cuprous bromide (y-CuBr)
4.4 Cuprous iodide (γ-Cul)
4.5 Silver fluoride (AgF)
4.6 Silver chloride (AgCl)
4.7 Silver bromide (AgBr)
4.8 Silver iodide (Agl)
5 III2-VI3 compounds
5.0 Crystal structure of quasi-binary II2-VI3
compounds
5.1 Gallium sulfide (Ga2S3)
5.2 Gallium selenide (Ga2Se3)
5.3 Gallium telluride (Ga2Te3)
5.4 Indium sulfide (In2S3)
5.5 Indium selenide (In2Se3)
5.6 Indium telluride (In2Te3)
6 I-III-VI2 compounds
(included are I-Fe-VI2 compounds)
6.0 Crystal structure and electronic structure
6.1 Copper aluminum sulfide (CuA1S2)
6.2 Copper aluminum selenide (CuA1Se2)
6.3 Copper aluminum telluride (CuA1Te2)
6.4 Copper gallium sulfide (CuGaS2)
6.5 Copper gallium selenide (CuGaSe2)
6.6 Copper gallium telluride (CuGaTe2)
6.7 Copper indium sulfide (CulnS2)
6.8 Copper indium selenide (CulnSe2)
6.9 Copper indium telluride (CuInTe2)
6.10 Silver gallium sulfide (AgGaS2)
6.11 Silver gallium selenide (AgGaSe2)
6.12 Silver gallium telluride (AgGaTe2)
6.13 Silver indium sulfide (AglnS2)
6.14 Silver indium selenide (AgInSe2)
6.15 Silver indium telluride (AgInTe2)
6.16 Copper thallium sulfide (CuT1S2)
6.17 Copper thallium selenide (CuT1Se2)
6.18 Copper thallium telluride (CuT1Te2)
6.19 Silver thallium selenide (AgTISe2)
6.20 Silver thallium telluride (AgT1Te2)
6.21 Copper iron sulfide (CuFeS2)
6.22 Copper iron selenide (CuFeSe2)
6.23 Copper iron telluride (CuFeTe2)
6.24 Silver iron selenide (AgFeSe2)
6.25 Silver iron telluride (AgFeTe2)
7 II-IV-V2 compounds
7.0 Crystal structure and electronic structure
7.1 Magnesium silicon phosphide (MgSiP2)
7.2 Zinc silicon phosphide (ZnSiP2)
7.3 Zinc silicon arsenide(ZnSiAs2)
7.4 Zinc germanium nitride (ZnGeN2)
7.5 Zinc germanium phosphide (ZnGeP2)
7.6 Zinc germanium arsenide (ZnGeAs2)
7.7 Zinc tin phosphide (ZnSnP2)
7.8 Zinc tin arsenide (ZnSnAs2)
7.9 Zinc tin antimonide (ZnSnS