Preface

1　Electrons and Holes in Semiconductors

　1.1　Silicon Crystal Structure

　1.2　Bond Model of Electrons and Holes

　1.3　Energy Band Model

　1.4　Semiconductors, Insulators, and Conductors

　1.5　Electrons and Holes

　1.6　Density of States

　1.7　Thermal Equilibrium and the Fermi Function

　1.8　Electron and Hole Concentrations

　1.9　General Theory ofnandp

　1.10 Carrier Concentrations at Extremely High and Low Temperatures

　1.11 Chapter Summary

　PROBLEMS

　REFERENCES

　GENERAL REFERENCES

2　Motion and Recombination of Electrons and Holes

　2.1　Thermal Motion

　2.2　Drift

　2.3　Diffusion Current

　2.4　Relation Between the Energy Diagram and V,%

　2.5　Einstein Relationship Between D and u

　2.6　Electron-Hole Recombination

　2.7　Thermal Generation

　2.8　Quasi-Equilibrium and Quasi-Fermi Levels

　2.9　Chapter Summary

　PROBLEMS

　REFERENCES

　GENERAL REFERENCES

3　Device Fabrication Technology

　3.1　Introduction to Device Fabrication

　3.2　Oxidation of Silicon

　3.3　Lithography

　3.4　Pattern Transfer-Etching

　3.5　Doping

　3.6　Dopant Diffusion

　3.7　Thin-Film Deposition

　3.8　Interconnect-The Back-End Process

　3.9　Testing, Assembly, and Qualification

　3.10　Chapter Summary-A Device Fabrication Example

　PROBLEMS

　REFERENCES

　GENERAL REFERENCES

4　PN and Metal-Semiconductor Junctions

　Part 1　PN Junction

　4.1　Building Blocks of the PN Junction Theory

　4.2　* Depletion-Layer Model

　4.3　Reverse-Biased PN Junction

　4.4　Capacitance-Voltage Characteristics

　4.5　Junction Breakdown

　4.6　Carrier Injection Under Forward Bias--Quasi-Equilibrium Boundary Condition

　4.7　Current Continuity Equation

　4.8　Excess Carriers in Forward-Biased PN Junction

　4.9　PN Diode IV Characteristics

　4.10　Charge Storage

　4.11　Small-Signal Model of the Diode

　Part 2　Application to Optoelectronic Devices

　4.12　Solar Cells

　4.13　Light-Emitting Diodes and Solid-State Lighting

　4.14　Diode Lasers

　4.15　Photodiodes

　Part Ⅲ: Metal-Semiconductor Junction

　4.16　Schottky Barriers

　4.17　Thermionic Emission Theory

　4.18　Schottky Diodes

　4.19　Applications of Schottky Diodes

　4.20　Quantum Mechanical Tunneling

　4.21　Ohmic Contacts

　4.22　Chapter Summary

　PROBLEMS

　REFERENCES

　GENERAL REFERENCES

5　MOS Capa

　5.1 Flat-Band Condition and Flat-Band Voltage

　5.2 Surface Accumulation

　5.3 Surface Depletion

　5.4 Threshold Condition and Threshold Voltage

　5.5 Strong Inversion Beyond Threshold

　5.6 MOS C-V Characteristics

　5.7 Oxide Charge--A Modification to Vfband Vt

　5.8 Poly-Si Gate Depletion--Effective Increase in Tox

　5.9 Inversion and Accumulation Charge-Layer Th

　and Quantum Mechanical Effect

　5.1 0CCD Imager and CMOS Imager

　5.1 1Chapter Summary

　PRO

　REFERENCES

　GENERAL REFERENCES

6　MOS Trans

　6.1 Introduction to the M

　6.2 Complementary MOS (CMOS) Techn

　6.3 Surface Mobilities and High-Mobility

　6.4 MOSFET Vt, Body Effect, and Steep Retrograde Doping

　6.5 QINVin M

　6.6 Basic MOSFETIV Model

　6.7 CMOS Inverter--A Circuit Example

　6.8 Velocity Saturation

　6.9 MOSFET IV Model with Velocity Saturation

　6.1 0Parasitic Source-Drain Resistance

　6.1 1 * Extraction of the Series Resistance and the Effective Channel Length

　6.1 2Velocity Overshoot and Source Velocity Limit

　6.1 3Output Conductance

　6.1 4 * High-Frequency Performance

　6.1 5 = MOSFET Noises

　6.1 6SRAM, DRAM, Nonvolatile (Flash) Memory Devices

　6.1 7Chapter Summary

　PROBLEMS

　REFERENCES

　GENERAL REFERENCES

7　MOSFETs in ICs-Scaling, Leakage, and Other T

　7.1　Technology Scaling--For Cost, Speed, and Power Consumption

　7.2　Subthreshold Current--"Off" Is Not Totally"Off"

　7.3　* Vt Roll-Off--Short-Channel MOSFETs Leak

　7.4　= Reducing Gate-Insulator Electrical Thickness and Tunneling Leakage

　7.5　How to Reduce Wdep

　7.6　Shallow Junction and Metal SourceDrain MOSFET

　7.7　Trade-Off Betweenon andoff and Design for Manufacturing

　7.8　Ultra-Thin-Body SOl and Multigate MOSFETs

　7.9　Output Conductance

　7.10　Device and Process Simulation

　7.11　MOSFET Compact Model for Circuit Simulation

　7.12　Chapter Summary

　PROBLEMS

　REFERENCES

　GENERAL REFERENCES

8　Bipolar Trans

　8.1　Introduction to the BJT

　8.2　Collector Current

　8.3　Base Current

　8.4　* Current Gain

　8.5　Base-Width Modulation by Collector Voltage

　8.6　Ebers-Moll Model

　8.7　Transit Time and Charge Storage

　8.8　Small-Signal Model

　8.9　Cutoff Frequency

　8.10　Charge Control Model

　8.11　Model for Large-Signal Circuit Simulation

　8.12　Chapter Summary

　PROBLEMS

　REFERENCES

　GENERAL REFERENCES

　Appendix Ⅰ

　Derivation of the Density of States

　Appendix Ⅱ

　Derivation of the Fermi-Dirac Distribution

　Appendix Ⅲ

　Self-Consistencies of Minority Carrier As

　Answers to Selected Problems

　Index